NSV20101JT1G
TRANS NPN 20V 1A SC89-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi NSV20101JT1G, an NPN Bipolar Junction Transistor (BJT), offers a 20V collector-emitter breakdown voltage and a maximum collector current of 1A. This device features a transition frequency of 350MHz and a maximum power dissipation of 255mW. Designed for surface mounting, it is supplied in an SC-89-3 package (SC-89, SOT-490) on tape and reel. Key parameters include a low Vce(sat) of 220mV at 100mA/1A and a minimum DC current gain (hFE) of 200 at 100mA/2V. Operating temperature ranges from -55°C to 150°C. This component is suitable for applications in telecommunications, consumer electronics, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-89, SOT-490 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 220mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 2V |
| Frequency - Transition | 350MHz |
| Supplier Device Package | SC-89-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 255 mW |
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