NSV1C301ET4G-VF01
TRANS NPN 100V 3A DPAKManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi NPN Bipolar Junction Transistor (BJT), part number NSV1C301ET4G-VF01, offers robust performance for demanding applications. This device features a 100V collector-emitter breakdown voltage and a continuous collector current of 3A, making it suitable for power switching and amplification circuits. With a maximum power dissipation of 2.1W and a transition frequency of 120MHz, it provides efficient operation across a range of frequencies. The transistor exhibits a minimum DC current gain (hFE) of 120 at 1A and 2V, and a Vce(sat) of 250mV at 300mA and 3A. Packaged in a TO-252-3, DPAK (SC-63) for surface mounting, it operates within a temperature range of -65°C to 150°C. This component is commonly utilized in automotive, industrial, and general-purpose power management applications requiring reliable NPN transistor functionality.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300mA, 3A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1A, 2V |
| Frequency - Transition | 120MHz |
| Supplier Device Package | DPAK |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 2.1 W |
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