NSV1C300ET4G-VF01
TRANS PNP 100V 3A DPAKManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi NSV1C300ET4G-VF01 is a PNP bipolar junction transistor designed for demanding applications. This AEC-Q101 qualified device features a 100V collector-emitter breakdown voltage and a continuous collector current capability of up to 3A. With a maximum power dissipation of 2.1W and a transition frequency of 100MHz, it offers efficient switching performance. The transistor exhibits a minimum DC current gain (hFE) of 180 at 500mA and 2V, with a saturation voltage (Vce(sat)) of 400mV at 300mA and 3A. The NSV1C300ET4G-VF01 is housed in a TO-252-3, DPAK (SC-63) surface mount package and operates across a wide temperature range of -65°C to 150°C. This component is suitable for use in automotive and industrial environments.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 300mA, 3A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 500mA, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | DPAK |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 2.1 W |
| Qualification | AEC-Q101 |
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