NST856BF3T5G
TRANS PNP 65V 0.1A SOT1123Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi NST856BF3T5G is a PNP bipolar junction transistor designed for surface mount applications. This component features a 65V collector-emitter breakdown voltage and a maximum continuous collector current of 100mA. It offers a minimum DC current gain (hFE) of 220 at 2mA collector current and 5V Vce. With a transition frequency of 100MHz and a maximum power dissipation of 290mW, it is suitable for general-purpose amplification and switching. The device operates across a temperature range of -55°C to 150°C. Packaged in a compact SOT-1123, the NST856BF3T5G is commonly utilized in consumer electronics and industrial control systems. The saturation voltage (Vce(sat)) is specified at 800mV maximum for a base current of 5mA driving a 100mA collector current.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-1123 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 220 @ 2mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SOT-1123 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 65 V |
| Power - Max | 290 mW |
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