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NST848BF3T5G

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NST848BF3T5G

TRANS NPN 30V 0.1A SOT1123

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi NST848BF3T5G is an NPN bipolar junction transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 30V and a maximum collector current of 100mA. With a transition frequency of 100MHz and a power dissipation rating of 290mW, it is suitable for general-purpose amplification and switching in various electronic systems. The device operates within an extended temperature range of -55°C to 150°C. It is supplied in a compact SOT-1123 package, delivered on tape and reel for automated assembly. The minimum DC current gain (hFE) is rated at 200 at 2mA and 5V. Key applications include consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-1123
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA
Current - Collector Cutoff (Max)15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA, 5V
Frequency - Transition100MHz
Supplier Device PackageSOT-1123
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)30 V
Power - Max290 mW

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