NST846BF3T5G
TRANS NPN 65V 0.1A SOT1123Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi NST846BF3T5G is a bipolar junction transistor (BJT) featuring an NPN configuration. This component offers a collector-emitter breakdown voltage of 65V and a maximum continuous collector current (Ic) of 100mA. With a transition frequency (fT) of 100MHz and a power dissipation rating of 290mW, it is suitable for various applications. The device exhibits a minimum DC current gain (hFE) of 200 at 2mA and 5V. Saturation voltage (Vce(sat)) is specified at a maximum of 600mV at 5mA base current and 100mA collector current. The transistor is supplied in a SOT-1123 surface-mount package, delivered on tape and reel. Operating temperature range is -55°C to 150°C. This device finds application in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-1123 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SOT-1123 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 65 V |
| Power - Max | 290 mW |
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