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NST489AMT1

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NST489AMT1

TRANS NPN 30V 2A 6TSOP

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi NST489AMT1 is an NPN bipolar junction transistor (BJT) designed for surface mount applications. This component features a collector-emitter breakdown voltage of 30V and a maximum collector current of 2A. With a transition frequency of 300MHz and a maximum power dissipation of 535mW, it is suitable for various general-purpose switching and amplification tasks. The device exhibits a minimum DC current gain (hFE) of 300 at 500mA collector current and 5V collector-emitter voltage, and a Vce(sat) of 200mV at 1A collector current and 100mA base current. It is supplied in a 6-TSOP package, presented on tape and reel. Typical applications include consumer electronics and industrial control systems. The operating temperature range is from -55°C to 150°C.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic200mV @ 100mA, 1A
Current - Collector Cutoff (Max)100nA
DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 500mA, 5V
Frequency - Transition300MHz
Supplier Device Package6-TSOP
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)30 V
Power - Max535 mW

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