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NSS60200SMTTBG

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NSS60200SMTTBG

TRANS PNP 60V 2A 6WDFN

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi NSS60200SMTTBG is a PNP bipolar junction transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 60V and a maximum continuous collector current of 2A. With a transition frequency of 155MHz, it is suitable for use in power management and signal amplification circuits. The device offers a minimum DC current gain (hFE) of 150 at 100mA and 2V, and a Vce saturation of 450mV at 200mA and 2A. Packaged in a compact 6-WDFN (2x2) with an exposed pad, it supports a maximum power dissipation of 1.8W and operates across a temperature range of -55°C to 150°C. The NSS60200SMTTBG is commonly found in industrial and automotive applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-WDFN Exposed Pad
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic450mV @ 200mA, 2A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce150 @ 100mA, 2V
Frequency - Transition155MHz
Supplier Device Package6-WDFN (2x2)
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max1.8 W

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