NSS40601CF8T1G
TRANS NPN 40V 6A CHIPFETManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi NPN Bipolar Junction Transistor, part number NSS40601CF8T1G. This device features a collector-emitter breakdown voltage of 40V and a maximum continuous collector current of 6A. With a transition frequency of 140MHz and a maximum power dissipation of 830mW, it is suitable for applications requiring efficient switching and amplification. The DC current gain (hFE) is a minimum of 200 at 1A and 2V. Saturation voltage (VCE(sat)) is specified at 135mV maximum for 4A collector current driven by 400mA base current. The transistor is supplied in an 8-SMD, Flat Leads ChipFET™ package, mounted via surface mount technology, and delivered on tape and reel. It operates within an ambient temperature range of -55°C to 150°C. This component is commonly utilized in power management and general-purpose switching applications across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 135mV @ 400mA, 4A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1A, 2V |
| Frequency - Transition | 140MHz |
| Supplier Device Package | ChipFET™ |
| Current - Collector (Ic) (Max) | 6 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 830 mW |