NSS40600CF8T1G
TRANS PNP 40V 6A CHIPFETManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi NSS40600CF8T1G is a PNP bipolar junction transistor designed for efficient power switching applications. This device features a collector-emitter breakdown voltage of 40V and a maximum continuous collector current of 6A. With a high DC current gain (hFE) of 220 minimum at 1A and 2V, it offers robust amplification characteristics. Its transition frequency is 100MHz, enabling operation in a variety of signal processing and control circuits. The Vce saturation voltage is specified at a maximum of 220mV at 400mA collector current and 4A, ensuring low power dissipation during conduction. The maximum power dissipation is 830 mW. This transistor is housed in an 8-SMD, Flat Leads ChipFET™ package, suitable for surface mounting. Typical applications include power management, battery charging circuits, and general-purpose switching in automotive and industrial electronics. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 220mV @ 400mA, 4A |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 220 @ 1A, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | ChipFET™ |
| Current - Collector (Ic) (Max) | 6 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 830 mW |