NSS40500UW3T2G
TRANS PNP 40V 5A 3WDFNManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi NSS40500UW3T2G is a PNP bipolar junction transistor designed for demanding applications. This device features a 40V collector-emitter breakdown voltage and a maximum continuous collector current of 5A. The minimum DC current gain (hFE) is specified at 180 at 2A and 2V, with a saturation voltage (Vce(sat)) of 260mV at 400mA collector current and 4A collector current. It operates with a transition frequency of 100MHz and a maximum power dissipation of 875mW. The transistor is housed in a compact 3-WDFN (2x2) package with an exposed pad, facilitating efficient heat dissipation. The NSS40500UW3T2G is suitable for use in power management and general-purpose switching applications across various industrial sectors. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 260mV @ 400mA, 4A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 2A, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | 3-WDFN (2x2) |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 875 mW |
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