NSS40200UW6T1G
TRANS PNP 40V 2A 6WDFNManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi NSS40200UW6T1G is a PNP bipolar junction transistor designed for demanding applications. This surface mount component offers a collector-emitter breakdown voltage of 40V and a continuous collector current capability of up to 2A. With a transition frequency of 140MHz and a maximum power dissipation of 875mW, it is suitable for power management and switching circuits. The device features a minimum DC current gain (hFE) of 150 at 1A and 2V, and a Vce saturation of 300mV at 20mA and 2A. The collector cutoff current (ICBO) is a maximum of 100nA. Packaged in a 6-WDFN (2x2) with an exposed pad and supplied on tape and reel, this transistor is utilized in automotive, industrial, and consumer electronics sectors. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 20mA, 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 1A, 2V |
| Frequency - Transition | 140MHz |
| Supplier Device Package | 6-WDFN (2x2) |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 875 mW |