NSS35200CF8T1G
TRANS PNP 35V 2A CHIPFETManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi NSS35200CF8T1G is a PNP Bipolar Junction Transistor (BJT) designed for surface mount applications. This component features a 35V collector-emitter breakdown voltage and a maximum collector current of 2A. With a transition frequency of 100MHz and a power dissipation of 635mW, it is suitable for various power management and signal switching functions. The device exhibits a minimum DC current gain (hFE) of 100 at 1.5A and 2V, with a Vce(sat) of 300mV at 20mA and 2A. Operating within a temperature range of -55°C to 150°C (TJ), it is housed in an 8-SMD, Flat Leads ChipFET™ package, supplied on tape and reel. This transistor finds application in automotive, industrial, and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 20mA, 2A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1.5A, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | ChipFET™ |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 35 V |
| Power - Max | 635 mW |
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