NSS30071MR6T1G
TRANS NPN 30V 0.7A SC74Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi NSS30071MR6T1G is a bipolar junction transistor (BJT) featuring an NPN configuration. This component offers a 30V collector-emitter breakdown voltage and a maximum collector current of 700 mA. With a power dissipation rating of 342 mW, it is supplied in an SC-74 (SOT-457) surface mount package, provided on tape and reel. Key parameters include a minimum DC current gain (hFE) of 150 at 100mA and 3V, and a saturation voltage (Vce(sat)) of 400mV at 70mA and 700mA. The collector cutoff current (ICBO) is specified at a maximum of 1µA. This transistor is suitable for applications in industrial and consumer electronics, particularly where efficient switching or amplification in a compact form factor is required.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74, SOT-457 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 70mA, 700mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 100mA, 3V |
| Frequency - Transition | - |
| Supplier Device Package | SC-74 |
| Current - Collector (Ic) (Max) | 700 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 342 mW |
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