NSS20600CF8T1G
TRANS PNP 20V 6A CHIPFETManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi NSS20600CF8T1G is a PNP bipolar transistor designed for surface mount applications. This component offers a collector current of up to 6 A and a collector-emitter breakdown voltage of 20 V. With a transition frequency of 100 MHz and a maximum power dissipation of 830 mW, it is suitable for various power management and signal switching tasks. Key parameters include a minimum DC current gain (hFE) of 220 at 1 A and 2 V, and a Vce saturation of 200 mV at 400 mA and 4 A. The device operates within a temperature range of -55°C to 150°C and is supplied in a ChipFET™ package. This device finds application in consumer electronics, industrial automation, and automotive systems.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 400mA, 4A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 220 @ 1A, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | ChipFET™ |
| Current - Collector (Ic) (Max) | 6 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 830 mW |
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