NSS20300MR6T1G
TRANS PNP 20V 3A 6TSOPManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi NSS20300MR6T1G is a PNP bipolar junction transistor designed for surface mount applications. This component offers a collector-emitter breakdown voltage of 20V and a continuous collector current capability of 3A. With a minimum DC current gain (hFE) of 100 at 1.5A and 2V, and a transition frequency of 100MHz, it is suitable for various switching and amplification tasks. The transistor features a maximum power dissipation of 545mW and an operating temperature range of -55°C to 150°C. It is supplied in a 6-TSOP package, presented on tape and reel. The Vce saturation is specified at a maximum of 320mV for 20mA base current and 2A collector current, with a collector cutoff current of 100nA. This device finds application in power management and signal control circuits across industries such as automotive and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 320mV @ 20mA, 2A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1.5A, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | 6-TSOP |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 545 mW |
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