NSS20200W6T1G
TRANS PNP 20V 2A SC88/SC70-6Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi PNP Bipolar Junction Transistor, Part Number NSS20200W6T1G. This device features a 20V collector-emitter breakdown voltage and a maximum collector current of 2A. It offers a minimum DC current gain (hFE) of 200 at 1A and 2V. The transition frequency is rated at 100MHz, with a maximum power dissipation of 555mW. The transistor is housed in an SC-88/SC70-6 (SOT-363) surface-mount package, supplied on tape and reel. Key parameters include a Vce(sat) of 215mV at 20mA/2A and a collector cutoff current (ICBO) of 100nA. Operating temperature ranges from -55°C to 150°C. This component is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 215mV @ 20mA, 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1A, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 555 mW |
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