NSS12601CF8T1G
TRANS NPN 12V 6A CHIPFETManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi NSS12601CF8T1G is an NPN bipolar junction transistor (BJT) designed for surface mount applications. This component features a collector-emitter breakdown voltage of 12V and a maximum continuous collector current of 6A. With a transition frequency of 140MHz and a power dissipation rating of 830mW, it is suitable for various switching and amplification tasks. The device exhibits a minimum DC current gain (hFE) of 200 at 1A, 2V, and a Vce(sat) of 120mV at 400mA, 4A. Its low collector cutoff current is specified at 100nA (ICBO). The NSS12601CF8T1G is supplied in an 8-SMD, Flat Leads ChipFET™ package, presented on a tape and reel. This transistor finds utility in industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 120mV @ 400mA, 4A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1A, 2V |
| Frequency - Transition | 140MHz |
| Supplier Device Package | ChipFET™ |
| Current - Collector (Ic) (Max) | 6 A |
| Voltage - Collector Emitter Breakdown (Max) | 12 V |
| Power - Max | 830 mW |
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