NSS12600CF8T1G
TRANS PNP 12V 5A CHIPFETManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi NSS12600CF8T1G is a PNP bipolar junction transistor designed for demanding applications requiring efficient power switching. This component features a collector-emitter breakdown voltage (Vce) of 12 V and a maximum continuous collector current (Ic) of 5 A. With a transition frequency (fT) of 100 MHz, it is suitable for moderate frequency switching circuits. The device offers a minimum DC current gain (hFE) of 250 at 1 A and 2 V, with a low Vce(sat) of 170 mV at 400 mA and 4 A, minimizing power dissipation. Rated at 830 mW power dissipation, it is housed in an 8-SMD, Flat Leads ChipFET™ package for surface mounting. Typical applications include power management, battery charging circuits, and general-purpose amplification in consumer electronics, automotive, and industrial systems. The NSS12600CF8T1G is supplied on tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 170mV @ 400mA, 4A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 1A, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | ChipFET™ |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 12 V |
| Power - Max | 830 mW |
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