NSM80100MT1G
TRANS PNP 80V 0.5A SC74Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi NSM80100MT1G is a PNP bipolar junction transistor (BJT) designed for surface-mount applications. This component features a maximum collector-emitter breakdown voltage of 80V and can handle a continuous collector current of up to 500mA. With a transition frequency of 150MHz and a maximum power dissipation of 270mW, it is suitable for various signal amplification and switching tasks. The DC current gain (hFE) is a minimum of 120 at 10mA collector current and 1V collector-emitter voltage. The transistor offers a collector cutoff current of 100nA and a Vce(sat) of 250mV at 10mA base current and 100mA collector current. Packaged in an SC-74 (SOT-457) case and supplied on tape and reel, this device finds application in consumer electronics and industrial control systems. It operates within an ambient temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74, SOT-457 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 10mA, 1V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | SC-74 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 270 mW |
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