NSL12AWT1G
TRANS PNP 12V 2A SC88/SC70-6Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi NSL12AWT1G is a PNP bipolar junction transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 12V and a maximum collector current of 2A. With a transition frequency of 100MHz, it offers a minimum DC current gain (hFE) of 100 at 800mA and 1.5V. The transistor has a maximum power dissipation of 450mW and a Vce(sat) of 290mV at 20mA/1A. The NSL12AWT1G is supplied in the SC-88/SC70-6/SOT-363 package, commonly known as SC-88 or SOT-363, and is available on tape and reel. This device is suitable for use in various electronic circuits across industries such as consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 290mV @ 20mA, 1A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 800mA, 1.5 V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 12 V |
| Power - Max | 450 mW |
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