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NSL12AWT1

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NSL12AWT1

TRANS PNP 12V 2A SC88/SC70-6

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

The onsemi NSL12AWT1 is a PNP bipolar junction transistor designed for surface mount applications. This component offers a 12V collector-emitter breakdown voltage and a maximum collector current of 2A. It features a transition frequency of 100MHz and a maximum power dissipation of 450mW. The DC current gain (hFE) is specified as a minimum of 100 at 800mA collector current and 1.5V collector-emitter voltage. Saturation voltage (Vce(sat)) is 290mV maximum at 20mA base current and 1A collector current. Collector cutoff current is a maximum of 100nA. Supplied in a 6-TSSOP, SC-88, SOT-363 package, this transistor is suitable for use in industrial and consumer electronics. The NSL12AWT1 is shipped on a tape and reel for automated assembly.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic290mV @ 20mA, 1A
Current - Collector Cutoff (Max)100nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 800mA, 1.5 V
Frequency - Transition100MHz
Supplier Device PackageSC-88/SC70-6/SOT-363
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)12 V
Power - Max450 mW

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