NSCT817-25LT3G
TRANS NPN 45V 0.5A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi NSCT817-25LT3G is an NPN bipolar junction transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 45 V and a maximum continuous collector current of 500 mA. The device offers a minimum DC current gain (hFE) of 160 at 100 mA and 1 V, with a transition frequency of 100 MHz. Maximum power dissipation is rated at 225 mW, and the saturation voltage (Vce(sat)) is a maximum of 700 mV at 50 mA collector current and 50 mA base current. The transistor is supplied in a SOT-23-3 (TO-236) package, presented on tape and reel. Its operating temperature range is -55°C to 150°C. This component finds application in various electronic systems, including industrial automation and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 100mA, 1V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 225 mW |
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