NSCT817-25LT1G
TRANS NPN 45V 0.5A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi NSCT817-25LT1G is an NPN bipolar junction transistor designed for general-purpose switching and amplification applications. This device features a collector-emitter breakdown voltage of 45V and a maximum continuous collector current of 500mA, with a low saturation voltage of 700mV at 50mA/500mA. Its transition frequency is 100MHz, and it offers a minimum DC current gain (hFE) of 160 at 100mA and 1V. The NSCT817-25LT1G is housed in a compact SOT-23-3 (TO-236) surface-mount package, suitable for high-density board designs. It has a maximum power dissipation of 225mW and an operating temperature range of -55°C to 150°C. This component is commonly utilized in consumer electronics, industrial control systems, and automotive applications. It is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 100mA, 1V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 225 mW |
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