NSCT3906LT1G
TRANS PNP 40V 0.2A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi NSCT3906LT1G is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This device features a 40V collector-emitter breakdown voltage and a maximum collector current of 200mA. With a transition frequency of 250MHz and a maximum power dissipation of 225mW, it is suitable for operation within a temperature range of -55°C to 150°C. The NSCT3906LT1G is housed in a compact SOT-23-3 (TO-236) surface-mount package, supplied on tape and reel. Key electrical characteristics include a minimum DC current gain (hFE) of 100 at 10mA and 1V, and a Vce saturation of 400mV at 5mA and 50mA. This component finds application in various industries including consumer electronics, industrial control, and telecommunications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 1V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 225 mW |
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