NSCT3904LT1G
TRANS NPN 40V 0.2A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi NSCT3904LT1G is an NPN bipolar junction transistor designed for general-purpose switching and amplification applications. This component features a collector-emitter breakdown voltage of 40V and a continuous collector current capability of 200 mA. The NSCT3904LT1G exhibits a minimum DC current gain (hFE) of 100 at 10mA collector current and 1V collector-emitter voltage. Its transition frequency is rated at 300 MHz, and it can dissipate a maximum power of 225 mW. The device is housed in a SOT-23-3 (TO-236) surface-mount package, supplied on tape and reel. Typical applications include consumer electronics and industrial control systems. The saturation voltage (Vce(sat)) is a maximum of 300mV at 5mA base current and 50mA collector current. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 1V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 225 mW |
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