NSCT2907ALT1G
TRANS PNP 60V 0.6A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi NSCT2907ALT1G is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This device features a collector-emitter breakdown voltage of 60V and a maximum continuous collector current of 600mA. With a transition frequency of 200MHz and a power dissipation of 225mW, it is suitable for applications requiring moderate frequency response and power handling. The DC current gain (hFE) is a minimum of 100 at 150mA and 10V. The transistor is housed in a compact SOT-23-3 (TO-236) surface-mount package, ideal for space-constrained designs. Typical operating temperature range is -55°C to 150°C. This component finds use in various electronic systems, including consumer electronics and industrial control equipment.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 225 mW |
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