NSCT2222ALT1G
TRANS NPN 40V 0.6A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi NPN Bipolar Junction Transistor, part number NSCT2222ALT1G. This device offers a 40V collector-emitter breakdown voltage and a maximum collector current of 600mA. Key parameters include a minimum DC current gain (hFE) of 100 at 150mA and 10V, and a transition frequency of 300MHz. The transistor type is NPN, with a Vce(sat) of 1V at 50mA collector current and 500mA base current. It is packaged in a SOT-23-3 (TO-236) surface mount configuration, supplied on tape and reel. Maximum power dissipation is 225mW, with an operating temperature range of -55°C to 150°C. This component is suitable for applications in general-purpose switching and amplification across various industries.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 225 mW |
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