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NJVNJD2873T4G-VF01

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NJVNJD2873T4G-VF01

TRANS NPN 50V 2A DPAK

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

The onsemi NJVNJD2873T4G-VF01 is an NPN bipolar junction transistor (BJT) designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 2A. With a transition frequency of 65MHz and a power dissipation of 1.68W, it is suitable for various demanding applications. The DC current gain (hFE) is a minimum of 120 at 500mA and 2V. Saturation voltage is specified at a maximum of 300mV at 50mA and 1A. The device operates within a temperature range of -65°C to 175°C. Packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63, this transistor is supplied on a tape and reel. Its specifications make it applicable in power management, industrial control, and automotive electronics.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic300mV @ 50mA, 1A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 500mA, 2V
Frequency - Transition65MHz
Supplier Device PackageDPAK
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max1.68 W

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