NJVMJD45H11T4G-VF01
TRANS PNP 80V 8A DPAKManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi NJVMJD45H11T4G-VF01 is a PNP Bipolar Junction Transistor (BJT) designed for demanding applications. This component features an 80V collector-emitter breakdown voltage and a continuous collector current capability of 8A. With a maximum power dissipation of 1.75W and a transition frequency of 90MHz, it offers robust performance. The transistor exhibits a minimum DC current gain (hFE) of 40 at 4A and 1V, and a Vce(sat) of 1V at 400mA and 8A. Packaged in a TO-252-3, DPAK (SC-63) for surface mounting, it operates across a wide temperature range of -55°C to 150°C. This device is commonly employed in power switching, motor control, and general-purpose amplification within industrial and automotive sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 400mA, 8A |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 4A, 1V |
| Frequency - Transition | 90MHz |
| Supplier Device Package | DPAK |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1.75 W |
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