NJVMJD45H11D3T4G
TRANS PNP 80V 8A DPAKManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi NJVMJD45H11D3T4G is a PNP Bipolar Junction Transistor (BJT) designed for high-performance applications. This device features a collector-emitter breakdown voltage of 80V and a continuous collector current (Ic) capability of 8A, with a maximum power dissipation of 20W. The NJVMJD45H11D3T4G exhibits a transition frequency of 90MHz and a minimum DC current gain (hFE) of 40 at 4A and 1V. Its saturation voltage (Vce Saturation) is a maximum of 1V at 400mA base current and 8A collector current. Packaged in a DPAK (TO-252-3) surface-mount configuration, it is supplied on a tape and reel. This component is suitable for use in industrial, automotive, and power management applications requiring robust switching and amplification capabilities.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 400mA, 8A |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 4A, 1V |
| Frequency - Transition | 90MHz |
| Supplier Device Package | DPAK |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 20 W |
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