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NJVMJD44H11T4G-VF01

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NJVMJD44H11T4G-VF01

TRANS NPN 80V 8A DPAK

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

onsemi NJVMJD44H11T4G-VF01 is an NPN Bipolar Junction Transistor (BJT) designed for demanding applications. This component features a collector-emitter breakdown voltage of 80V and a maximum continuous collector current of 8A. With a transition frequency of 85MHz and a maximum power dissipation of 1.75W, it provides robust performance. The DC current gain (hFE) is a minimum of 40 at 4A, 1V, and the saturation voltage (Vce(sat)) is a maximum of 1V at 400mA, 8A. The transistor exhibits a collector cutoff current of 1µA. Housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package for surface mounting, this device is supplied on tape and reel. Its operating temperature range is -55°C to 150°C (TJ). This transistor is commonly utilized in power supply circuits, motor control, and general-purpose switching applications across various industrial and automotive sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 400mA, 8A
Current - Collector Cutoff (Max)1µA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 4A, 1V
Frequency - Transition85MHz
Supplier Device PackageDPAK
Current - Collector (Ic) (Max)8 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max1.75 W

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