NJVMJD31CT4G-VF01
TRANS NPN 100V 3A DPAKManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi NPN Bipolar Junction Transistor, part number NJVMJD31CT4G-VF01, offers a 100V collector-emitter breakdown voltage and a 3A continuous collector current. This device features a 3MHz transition frequency and a maximum power dissipation of 1.56W. The DC current gain (hFE) is a minimum of 25 at 1A and 4V. Collector cutoff current is specified at a maximum of 50µA. Vce saturation is 1.2V maximum at 375mA base current and 3A collector current. The NJVMJD31CT4G-VF01 is supplied in a DPAK (TO-252-3) surface mount package and is delivered on tape and reel. This component finds application in power management and general-purpose amplification across various industrial and consumer electronics segments. Operating temperature range is from -65°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 375mA, 3A |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 1A, 4V |
| Frequency - Transition | 3MHz |
| Supplier Device Package | DPAK |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1.56 W |
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