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NJVMJD210T4G-VF01

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NJVMJD210T4G-VF01

NJVMJD210T4G-VF01

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

The onsemi NJVMJD210T4G-VF01 is a PNP bipolar junction transistor designed for surface mount applications. Featuring a collector current capability of up to 5 A and a collector-emitter breakdown voltage of 25 V, this device offers a transition frequency of 65 MHz. Its DC current gain (hFE) is a minimum of 70 at 500 mA and 1 V. The transistor is rated for a maximum power dissipation of 1.4 W and operates within an industrial temperature range of -65°C to 150°C. The package type is TO-252-3, DPAK, suitable for automated assembly. This component is qualified to AEC-Q101 standards, making it suitable for automotive applications.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature-65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.8V @ 1A, 5A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 500mA, 1V
Frequency - Transition65MHz
Supplier Device PackageDPAK
GradeAutomotive
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)25 V
Power - Max1.4 W
QualificationAEC-Q101

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