NJVMJD148T4G-VF01
TRANS NPN 45V 4A DPAK-4Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi NPN Bipolar Junction Transistor (BJT) NJVMJD148T4G-VF01, a robust component designed for demanding applications. This device features a 45V collector-emitter breakdown voltage and a maximum collector current of 4A, with a power dissipation of 1.75W. It exhibits a minimum DC current gain (hFE) of 85 at 500mA and 1V, and a transition frequency of 3MHz. The transistor's saturation voltage (Vce Sat) is specified at a maximum of 500mV for an Ic of 2A and Ib of 200mA. Operating within an extended temperature range of -55°C to 150°C, it is housed in a surface-mount DPAK (TO-252-3) package, supplied on tape and reel. This component is frequently utilized in industrial power control and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 20µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 85 @ 500mA, 1V |
| Frequency - Transition | 3MHz |
| Supplier Device Package | DPAK |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 1.75 W |
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