NJVMJD117T4G
TRANS PNP DARL 100V 2A DPAKManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi NJVMJD117T4G is a PNP Darlington bipolar junction transistor designed for demanding applications. This surface mount device offers a collector-emitter breakdown voltage of 100V and a continuous collector current capability of up to 2A. Featuring a high DC current gain (hFE) of 1000 minimum at 2A and 3V, it excels in amplification and switching roles. The transition frequency is rated at 25MHz, and it dissipates up to 1.75W. The TO-252-3, DPAK (2 Leads + Tab), SC-63 package ensures efficient heat dissipation for through-hole mounting. Typical applications include power switching, motor control, and general-purpose amplification within industrial and automotive sectors. The device operates across a temperature range of -65°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Darlington |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 40mA, 4A |
| Current - Collector Cutoff (Max) | 20µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 2A, 3V |
| Frequency - Transition | 25MHz |
| Supplier Device Package | DPAK |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1.75 W |