NJVBDX53C
TRANS NPN DARL 100V 8A TO220Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi NJVBDX53C is an NPN Darlington bipolar junction transistor designed for demanding applications. This through-hole component, packaged in a TO-220-3 configuration, offers a collector-emitter breakdown voltage of 100 V and a continuous collector current capability of 8 A. With a maximum power dissipation of 65 W, it is suitable for power switching and amplification circuits across various industries including industrial automation, power supplies, and motor control. The NJVBDX53C features a high DC current gain (hFE) of 750 minimum at 3 A and 3 V, and a Vce saturation of 2 V maximum at 12 mA and 3 A. The collector cutoff current is rated at 500 µA maximum.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 12mA, 3A |
| Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 3A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-220 |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 65 W |
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