NJL4281DG
TRANS NPN 350V 15A TO264Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi NJL4281DG is an NPN bipolar junction transistor with an integrated isolated diode. This device features a collector-emitter breakdown voltage of 350V and a continuous collector current capability of 15A. The transition frequency is specified at 35MHz, with a maximum power dissipation of 230W. The transistor exhibits a minimum DC current gain (hFE) of 80 at 5A collector current and 5V collector-emitter voltage. Saturation voltage (Vce(sat)) is a maximum of 1V at 800mA base current and 8A collector current. The collector cutoff current (Ic) is a maximum of 100µA. Packaged in a TO-264, the NJL4281DG is suitable for through-hole mounting and operates within a temperature range of -65°C to 150°C. This component finds application in power switching and linear amplification circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-5 |
| Mounting Type | Through Hole |
| Transistor Type | NPN + Diode (Isolated) |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 800mA, 8A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5A, 5V |
| Frequency - Transition | 35MHz |
| Supplier Device Package | TO-264 |
| Current - Collector (Ic) (Max) | 15 A |
| Voltage - Collector Emitter Breakdown (Max) | 350 V |
| Power - Max | 230 W |
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