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NJL21194DG

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NJL21194DG

TRANS NPN 250V 16A TO264

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi NJL21194DG is an NPN bipolar junction transistor (BJT) designed for power applications. This device features a maximum collector-emitter breakdown voltage of 250 V and a continuous collector current capability of 16 A. With a power dissipation of up to 200 W and a transition frequency of 4 MHz, it is suitable for demanding switching and amplification tasks. The minimum DC current gain (hFE) is specified at 25 at 8 A collector current and 5 V collector-emitter voltage. The saturation voltage (Vce Sat) is a maximum of 4 V at 3.2 A base current and 16 A collector current. This component is supplied in a TO-264 package for through-hole mounting and operates within a temperature range of -65°C to 150°C. It finds application in power supply units, audio amplification, and general-purpose switching circuits.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-264-5
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic4V @ 3.2A, 16A
Current - Collector Cutoff (Max)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 8A, 5V
Frequency - Transition4MHz
Supplier Device PackageTO-264
Current - Collector (Ic) (Max)16 A
Voltage - Collector Emitter Breakdown (Max)250 V
Power - Max200 W

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