MSD601-ST1G
TRANS NPN 50V 0.1A SC59Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MSD601-ST1G is an NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. This component features a maximum collector-emitter breakdown voltage of 50 V and a continuous collector current rating of 100 mA. With a power dissipation of 200 mW and a minimum DC current gain (hFE) of 290 at 2 mA collector current and 10 V Vce, the MSD601-ST1G is suitable for use in consumer electronics, industrial automation, and automotive systems. The device is presented in an SC-59 (SOT-23-3) surface-mount package, supplied on tape and reel for automated assembly. It operates across a wide temperature range, up to 150°C (TJ), and exhibits a saturation voltage (Vce) of 500 mV at 10 mA base current and 100 mA collector current.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 290 @ 2mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | SC-59 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
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