MSD601-RT1
TRANS NPN 50V 0.1A SC59Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MSD601-RT1 is an NPN bipolar transistor designed for surface mount applications. This component, housed in an SC-59 (TO-236-3) package, offers a collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 100mA. It features a maximum power dissipation of 200mW and a low collector cutoff current of 100nA. The DC current gain (hFE) is specified at a minimum of 210 at 2mA collector current and 10V Vce. The saturation voltage (Vce Sat) is a maximum of 500mV at 10mA base current and 100mA collector current. This device operates reliably at temperatures up to 150°C (TJ). The onsemi MSD601-RT1 is commonly utilized in general-purpose amplification and switching circuits across various industrial and consumer electronics sectors. It is supplied in a Tape & Reel (TR) package.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 210 @ 2mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | SC-59 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
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