MSD1328-ST1G
TRANS NPN 20V 0.5A SC59Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MSD1328-ST1G is a surface-mount NPN bipolar junction transistor (BJT) housed in an SC-59 (TO-236-3) package. This component offers a maximum collector current of 500 mA and a collector-emitter breakdown voltage of 20 V. It features a minimum DC current gain (hFE) of 300 at 500 mA and 2 V. The transistor's maximum power dissipation is rated at 200 mW, with an operating junction temperature of up to 150°C. Saturation voltage (Vce(sat)) is a maximum of 400 mV at 20 mA base current and 500 mA collector current. The collector cutoff current (ICBO) is a maximum of 100 nA. This device is commonly utilized in various consumer electronics and industrial applications requiring general-purpose switching and amplification. The part is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 20mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 500mA, 2V |
| Frequency - Transition | - |
| Supplier Device Package | SC-59 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 200 mW |
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