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MSD1328-RT1G

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MSD1328-RT1G

TRANS NPN 20V 0.5A SC59

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi MSD1328-RT1G is an NPN bipolar junction transistor designed for surface mount applications. This component offers a collector-emitter breakdown voltage of 20V and a maximum continuous collector current (Ic) of 500mA. With a power dissipation of 200mW and an operating junction temperature of up to 150°C, it is suitable for various electronic systems. The device exhibits a minimum DC current gain (hFE) of 200 at 500mA and 2V. It is provided in a compact SC-59 package (TO-236-3, SOT-23-3) and supplied on tape and reel (TR). This transistor finds application in general-purpose amplification and switching circuits across industries such as consumer electronics and industrial automation.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic400mV @ 20mA, 500mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 500mA, 2V
Frequency - Transition-
Supplier Device PackageSC-59
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)20 V
Power - Max200 mW

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