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MSC2712GT1

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MSC2712GT1

TRANS SS GP NPN 50V SC59

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

onsemi NPN Bipolar Junction Transistor, part number MSC2712GT1. This general-purpose transistor features a collector-emitter breakdown voltage of 50V and a continuous collector current capability of 100mA. With a transition frequency of 50MHz and a maximum power dissipation of 200mW, it is suitable for surface mount applications. The device offers a minimum DC current gain (hFE) of 200 at 2mA collector current and 6V collector-emitter voltage. It is supplied in a SC-59 (TO-236-3) package. This component finds application in various electronic systems including consumer electronics and industrial control.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-
Vce Saturation (Max) @ Ib, Ic500mV @ 10mA, 100mA
Current - Collector Cutoff (Max)100nA
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA, 6V
Frequency - Transition50MHz
Supplier Device PackageSC-59
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max200 mW

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