MSB92AS1WT1G
TRANS PNP 300V 0.5A SC70-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MSB92AS1WT1G is a PNP bipolar junction transistor (BJT) designed for high voltage applications. This surface mount component, housed in an SC-70-3 (SOT323) package, offers a collector-emitter breakdown voltage of 300V and a continuous collector current capability of up to 500mA. It features a transition frequency of 50MHz and a maximum power dissipation of 150mW at 150°C junction temperature. Key parameters include a low collector cutoff current of 250nA (ICBO) and a minimum DC current gain (hFE) of 120 at 1mA collector current and 10V collector-emitter voltage. This device is suitable for use in telecommunications, industrial control, and power management systems requiring efficient switching and amplification in compact form factors. It is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 2mA, 20mA |
| Current - Collector Cutoff (Max) | 250nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 10V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | SC-70-3 (SOT323) |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 150 mW |
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