MSB710-RT1G
TRANS PNP 50V 0.5A SC59Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi PNP Bipolar Junction Transistor (BJT), part number MSB710-RT1G. This device features a 50V collector-emitter breakdown voltage and a maximum collector current of 500mA. It offers a minimum DC current gain (hFE) of 120 at 150mA and 10V. The transistor is housed in an SC-59 (TO-236-3) surface-mount package, delivering 200mW of maximum power dissipation. Applications include general-purpose switching and amplification in consumer electronics and industrial automation. The device operates at temperatures up to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 30mA, 300mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | SC-59 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
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