MSB710-RT1
TRANS PNP 50V 0.5A SC59Manufacturer: onsemi
Categories: Single Bipolar Transistors
Quality Control: Learn More
The onsemi MSB710-RT1 is a PNP bipolar junction transistor (BJT) designed for surface mount applications. This component features a 50V collector-emitter breakdown voltage and a maximum collector current of 500mA. With a power dissipation rating of 200mW, it is suitable for applications requiring moderate power handling. The SC-59 package (TO-236-3, SOT-23-3) facilitates efficient PCB real estate utilization. Key electrical characteristics include a minimum DC current gain (hFE) of 120 at 150mA and 10V, and a Vce(sat) of 600mV at 30mA collector current. The low collector cutoff current (ICBO) of 100nA ensures minimal leakage. This device operates up to a junction temperature of 150°C. The MSB710-RT1 is commonly employed in consumer electronics, industrial controls, and power management circuits. It is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 30mA, 300mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | SC-59 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
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