MSB709-RT1G
TRANS PNP 45V 0.1A SC59Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi PNP Bipolar Junction Transistor, part number MSB709-RT1G. This transistor features a collector-emitter breakdown voltage of 45V and a maximum collector current of 100mA. With a power dissipation of 200mW, it is supplied in a compact SC-59 (TO-236-3) surface mount package, ideal for space-constrained designs. The device offers a minimum DC current gain (hFE) of 210 at 2mA collector current and 10V collector-emitter voltage. Saturation voltage is specified at a maximum of 500mV for 10mA base current and 100mA collector current. Operating temperature range extends to 150°C. This component finds application in various electronic circuits, including consumer electronics and industrial control systems, where efficient switching and amplification are required. The MSB709-RT1G is provided in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 210 @ 2mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | SC-59 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 200 mW |
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