MSA1162YT1G
TRANS PNP 50V 0.1A SC59Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MSA1162YT1G is a PNP bipolar junction transistor designed for surface mounting in SC-59 (TO-236-3) packages. This component offers a collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 100mA. It features a transition frequency of 80MHz and a maximum power dissipation of 200mW at 150°C junction temperature. Key electrical specifications include a minimum DC current gain (hFE) of 120 at 2mA collector current and 6V Vce, and a maximum Vce saturation of 500mV at 10mA base current and 100mA collector current. The collector cutoff current is specified at a maximum of 100nA. This device is commonly utilized in various industrial and commercial applications requiring small-signal amplification and switching. Packaging is supplied on tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 2mA, 6V |
| Frequency - Transition | 80MHz |
| Supplier Device Package | SC-59 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
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