MSA1162YT1
TRANS PNP 50V 0.1A SC59Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MSA1162YT1 is a PNP bipolar junction transistor (BJT) designed for surface-mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 100mA. With a transition frequency of 80MHz and a maximum power dissipation of 200mW, it is suitable for general-purpose switching and amplification tasks. The device exhibits a minimum DC current gain (hFE) of 120 at 2mA collector current and 6V collector-emitter voltage. Maximum collector cutoff current is specified at 100nA, and Vce saturation is rated at 500mV with 10mA base current and 100mA collector current. The transistor is housed in an SC-59 (TO-236-3) package and operates within a junction temperature range of -55°C to 150°C. This component finds application in consumer electronics and industrial control systems. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 2mA, 6V |
| Frequency - Transition | 80MHz |
| Supplier Device Package | SC-59 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
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